More Technical Information Than You Can Handle. 
 

.
 

Intel’s 1101

 
p>» Download all images (ZIP, 6 MB) Intel’s 1101 static random access memory (SRAM) was the first high-volume metal-oxide semiconductor (MOS) memory and the first chip to use silicon gates. The device was the result of a challenging development process. The conceptual groundwork for metal-oxide semiconductor memory had been established before Intel’s founding, but no …...

- View Press Release
- Visit Intel Corporation

Intel-Press
Posted: May 17, 2018 |  By: Wissen Schwamm
Recent Intel-Press related news.
Intel Hosts NASA Frontier Development Lab Demo Day for 2018 Research Presentations
Sensors – the Eyes and Ears of Autonomous Vehicles
Intel Introduces New NUC Kits and NUC Mini PCs to the Intel NUC Family
Intel Advances the Safe Integration of Drones into US Airspace
Protecting Our Customers through the Lifecycle of Security Threats
+ View more Intel-Press related news +