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Intel’s 1101

 
p>» Download all images (ZIP, 6 MB) Intel’s 1101 static random access memory (SRAM) was the first high-volume metal-oxide semiconductor (MOS) memory and the first chip to use silicon gates. The device was the result of a challenging development process. The conceptual groundwork for metal-oxide semiconductor memory had been established before Intel’s founding, but no …...

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Intel-Press
Posted: May 17, 2018 |  By: Wissen Schwamm
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