SUNNYVALE, CA and EAST FISHKILL, NY -- December 13, 2004 --AMD and IBM today announced that they have developed a new and unique strained silicon transistor technology aimed at improving processor performance and power efficiency. The breakthrough process results in up to a 24 percent transistor speed increase, at the same power levels, compared to similar transistors produced without the technology.
- View Press Release
- Visit AMD (Advanced Micro Devices, Inc.)
|
|
|